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Proceedings Paper

III-V Heterostructures For Laser Emission In The 2.55 µm Wavelength Region
Author(s): Joyti Bhan; Andre Joullie; Habib Mani; Anne-Marie Joullie; Claude Alibert; Jacques Benoit; Philippe Brosson
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Paper Abstract

III-V double heterostructure laser diodes emitting at room temperature near 2.55 μm can be prepared using InAsSbP, GaInAsSb or InAlAsSb active zones and GaAlAsSb confinement layers. The limits of the solid phase miscibility gap of these quaternary solid solutions were determined at 530°C. A phenomenological model giving the threshold current density of double heterostructure injection lasers is presented, and applied to the 2.55 μm emitting InAsSbP/ GaAlAsSb and GaInAsSb/GaAlAsSb DH lasers. It is shown that threshold currents are mainly controlled by Auger recombination currents. Thq low value of the overall Auger recombination coefficient for GaInAsSb alloy (C = 1.0 x 10 -28 cm6/s at 2.2 μm) gives threshold current densities varying from 4.5 kA/cm2 to 3 kA/cm2 at room temperature for Ga 0.73 In 0.27 As 0.24 Sb 0.76/Ga 1-x Al x As y Sb 1-y /GaSb 2.55 μm DH lasers when x is varied from 0.4 to 0.7.

Paper Details

Date Published: 1 January 1987
PDF: 9 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943585
Show Author Affiliations
Joyti Bhan, Universite des Sciences et Techniques du Languedoc (France)
Andre Joullie, Universite des Sciences et Techniques du Languedoc (France)
Habib Mani, Universite des Sciences et Techniques du Languedoc (France)
Anne-Marie Joullie, Universite des Sciences et Techniques du Languedoc (France)
Claude Alibert, Universite des Sciences et Techniques du Languedoc (France)
Jacques Benoit, Laboratoires de Marcoussis (France)
Philippe Brosson, Laboratoires de Marcoussis (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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