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Proceedings Paper

InP Passivation By Plasma HF Enhanced Sulphidation Duality Between The Growth And Ionic Bombardment Mechanisms Of The Sulphide Layer
Author(s): J Durand; M Gendry; L Cot
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Paper Abstract

The HF plasma enhanced sulphidation is used, as a low temperature alternative of passivation of the InP surface for the elaboration of the gate insulator in MISFET-InP. The species (atom, radical, ion) present in the H2S glow discharge and the potential repartition in a HF plasma, capacitive type with internal electrodes, are described. We comment models of the sulphide layers with composition and surface and interface roughness resulting of XPS Spectroscopy, Spectroscopic Ellipsometry ang Grazing X Ray Reflectrometry. We give a growth mechanism of the sulphide layer and we show the duality between the growth and ionic bombardment mechanisms of a growing layer in HF plasma.

Paper Details

Date Published: 1 January 1987
PDF: 11 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943577
Show Author Affiliations
J Durand, Ecole Nationale Superieure de Chimie (France)
M Gendry, Ecole Nationale Superieure de Chimie (France)
L Cot, Ecole Nationale Superieure de Chimie (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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