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Proceedings Paper

The Surface Recombination Velocity And The Diffusion Length On InGaAs p-i-n Photodiodes
Author(s): Ichiro Tonai; Takashi Yano; Hiroshi Okuda
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Paper Abstract

Two basic parameters, the surface recombination velocity(S) and the diffusion length(Le), have been studied through investigating the responsivity of InGaAs p-i-n photodiodes without an InP window layer. The values of S and Le were found to be 10 4cm/s and 4μm, respectively. The high responsivity of 0.7A/W at λ=1.3μm was obtained without an antireflection coating due to the small surface recombination velocity.

Paper Details

Date Published: 1 January 1987
PDF: 6 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943576
Show Author Affiliations
Ichiro Tonai, Sumitomo Electric Industries (Japan)
Takashi Yano, Sumitomo Electric Industries (Japan)
Hiroshi Okuda, Sumitomo Electric Industries (Japan)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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