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Proceedings Paper

Focused Ion Beams For Optoelectronic Technology: A Review.
Author(s): P Sudraud; G Ben Assayag
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Paper Abstract

Focused ion beams (FIB) systems allow maskless processes as n, p doping, isolation of semiconductors and selective disordering of GaAs-AlGaAs superiattices at submicronic scale. UHV compatiblility of FIB makes MBE/FIB coupling very promissing to build lasers and integrated optoelectronic structures. FIB machining of optical structures as laser mirrors can replace classical processes, with better control and comparable performances.

Paper Details

Date Published: 1 January 1987
PDF: 8 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943573
Show Author Affiliations
P Sudraud, Groupement Scientifique CNET-CNRS (France)
G Ben Assayag, Groupement Scientifique CNET-CNRS (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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