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Proceedings Paper

Molecular Beam Epitaxy Of AlGaInAs For Optoelectronics
Author(s): J P Praseuth; M Quillec; J M Gerard
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Paper Abstract

In this paper, we first describe the molecular beam epitaxial (MBE) growth procedure of AlGaInAs lattice-matche to InP. Next, we present the electrical and optical properties of this system in the whole range of compositions. We then compare these results with those of the more familiar GaInAsP/InP system.

Paper Details

Date Published: 1 January 1987
PDF: 3 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943571
Show Author Affiliations
J P Praseuth, Laboratoire de Bagneux (France)
M Quillec, Laboratoire de Bagneux (France)
J M Gerard, Laboratoire de Bagneux (France)

Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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