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Proceedings Paper

Growth Of InP And GaInAsP By MBE Using Gas Sources
Author(s): L Goldstein
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Paper Abstract

The growth of InP and GaInAsP by Molecular Beam Epitaxy has been highly improved by the use of gas sources : hydrides sources (GSMBE) and metalorganic sources (MOMBE or CBE). High purity materials, heterostructures with low threshold current density (1 kA/cm2), quantum wells with sharp interfaces have been grown either by GSMBE or by MOMBE. These techniques which offer many advantages as compared to other epitaxial techniques, especially regarding the compositional homogeneity, appear very promising for high yield production of high performance components and optoelectronic and microelectronic IC's.

Paper Details

Date Published: 1 January 1987
PDF: 4 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943570
Show Author Affiliations
L Goldstein, Laboratoires de Marcoussis (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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