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Proceedings Paper

Simulation Of Intrinsic Defects Related To The Ion Implantation Of InP Substrates
Author(s): Alfred Goltzene; Bernard Meyer; Claude Schwab
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Paper Abstract

Fast neutron irradiated InP substrate material reveals a new broad electron paramagnetic resonance singlet of 2750 G peak to peak linewidth, located at g = 2.28 ± 0.06, together with the expected anion antisite PIn spectrum. It is ascribed to a phosphorus vacancy Vp. Irradiated InP:Fe shows in addition a complex spectrum of Fe associated defects among which the Fe In-In i pairs aligned along 111 and 001 directions could be identified.

Paper Details

Date Published: 1 January 1987
PDF: 6 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943568
Show Author Affiliations
Alfred Goltzene, Universite Louis Pasteur (France)
Bernard Meyer, Universite Louis Pasteur (France)
Claude Schwab, Universite Louis Pasteur (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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