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Proceedings Paper

Infra Red Imaging Technique For Defect Recognition In III-V Wafers
Author(s): Jean Pierre Fillard
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Paper Abstract

Among the various physical approaches of wafer defect characterization, special attention is to be payed to the infra red techniques of inspection. In particular, transmission images and scattering tomography will be emphasized. The former leads to low resolution images attributed to EL2 absorption; this point will be critically reviewed. The latter gives highly resolved images of decorated dislocations. The state of the art in both techniques will be presented and compared.

Paper Details

Date Published: 1 January 1987
PDF: 8 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943567
Show Author Affiliations
Jean Pierre Fillard, Universite des Sciences et Techniques du Languedoc (France)

Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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