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Proceedings Paper

Recent Results In Semi-Insulating Indium Phosphide Crystal Growth
Author(s): Y Toudic; R Coquille; M Gauneau; G Grandpierre; B Lambert
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Paper Abstract

Dislocation content and thermal stability are improved by codoping iron doped semi-insulating (SI) InP with isoelectronic impurities. By using 3d impurities (Ti or Cr) as deep compensating donors, new SI InP have been grown. The thermal stability of Ti doped InP will be shown to be superior to that of Fe or Cr doped InP.

Paper Details

Date Published: 1 January 1987
PDF: 8 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943566
Show Author Affiliations
Y Toudic, Centre National d'Etudes des Telecommunications (France)
R Coquille, Centre National d'Etudes des Telecommunications (France)
M Gauneau, Centre National d'Etudes des Telecommunications (France)
G Grandpierre, Centre National d'Etudes des Telecommunications (France)
B Lambert, Centre National d'Etudes des Telecommunications (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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