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Proceedings Paper

Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure
Author(s): B Pelliciari; J P Chamonal; G L Destefanis; L Dicioccio
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Paper Abstract

The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

Paper Details

Date Published: 3 May 1988
PDF: 8 pages
Proc. SPIE 0865, Focal Plane Arrays: Technology and Applications, (3 May 1988); doi: 10.1117/12.943540
Show Author Affiliations
B Pelliciari, C.E.A (France)
J P Chamonal, C.E.A (France)
G L Destefanis, C.E.A (France)
L Dicioccio, C.E.A (France)

Published in SPIE Proceedings Vol. 0865:
Focal Plane Arrays: Technology and Applications
Jean-Pierre Chatard, Editor(s)

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