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Proceedings Paper

Gain Versus Current In Semiconductor Injection Laser: A Microscopic Approach
Author(s): G Chiaretti; C Vaccarino; M Milani
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Paper Abstract

A presentation of new theoretical results and of physical considerations will be given starting from a nonlinear model for semiconductor injection lasers. Particular attention will be devoted to the gain calculation, to the unphysical meaning of the superlinear approach commonly used for gain calculations and to the carrier lifetime dependence on the photon number.

Paper Details

Date Published: 2 June 1988
PDF: 10 pages
Proc. SPIE 0864, Advanced Optoelectronic Technology, (2 June 1988); doi: 10.1117/12.943531
Show Author Affiliations
G Chiaretti, ITALTEL (Italy)
C Vaccarino, ITALTEL (Italy)
M Milani, University of Milan (Italy)


Published in SPIE Proceedings Vol. 0864:
Advanced Optoelectronic Technology
Daniel B. Ostrowsky; Claude P. Puech, Editor(s)

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