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Proceedings Paper

Low Pressure MOCVD Of Uniform InP/GaInAs And GaInAsP Superlattice Structures And Quantum Wells For Optoelectronic Applications
Author(s): Holger Jurgensen
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Paper Abstract

GaInAs/InP and GaInAsP/InP structures have been grown at conditions optimized for laser fabrication. Across 2" wafers a homogeneity in thickness, composition and doping was achieved to better than 2 % at a total pressure of 20 mbar and high gas flow rates. The abruptness of the transition for quantum wells ranging from 0.5 to 50 nm in width is on the monolayer level. Photoluminescence line shifts (2K) are among the highest observed so far (max. 528 meV); the line widths are very small (i.e. 2.2 meV for 20 nm wells).

Paper Details

Date Published: 16 May 1988
PDF: 4 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943420
Show Author Affiliations
Holger Jurgensen, AIXTRON GmbH (Germany)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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