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Proceedings Paper

High-Speed Multiquantum Well Avalanche Photodiodes
Author(s): Y. Zebda; J. Hinckley; P. Bhattacharya; J. Singh; F-Y. Juang
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Paper Abstract

Synthetically modulated structures offer the capability of tunability of bandgap and other material parameters. In particular, the GaAs/AlGaAs and Ino.53Ga0.47As/ Ino.52A10.48As systems offer these advantages in the infrared and optical communication wavelength ranges. We report here the properties of superlattices and the properties of avalanche and p-i-n photodiodes made with thes materials. The multiquantum well struc-tures (MQW) have LZ and LB varying from 25-500Å. Impact ionization phenomena in the different structures have also been determined from carrier multiplication and noise measurements and have been analyzed by Monte Carlo techniques. Techniques for obtaining enhanced optical absorption in very high-speed photodiodes are demonstrated.

Paper Details

Date Published: 16 May 1988
PDF: 5 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943419
Show Author Affiliations
Y. Zebda, The University of Michigan (United States)
J. Hinckley, The University of Michigan (United States)
P. Bhattacharya, The University of Michigan (United States)
J. Singh, The University of Michigan (United States)
F-Y. Juang, The University of Michigan (United States)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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