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Proceedings Paper

Planar Integration Of Linear And Nonlinear III-V MOW Optical Comppnents
Author(s): John H. Marsh
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Paper Abstract

The recent development of optoelectronic devices based on quantum wells should permit monolithic integration of active and passive optical components within the same epitaxial layers. A planar process using multiple quantum well (MQW) layers to realise this objective is described. Nonlinear optical processes will be present in such structures, and their significance is discussed. Carrier lifetime measurements performed on GaAs/AlGaAs multiple quantum well structures are reported.

Paper Details

Date Published: 16 May 1988
PDF: 7 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943418
Show Author Affiliations
John H. Marsh, The University of Glasgow (Scotland)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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