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Proceedings Paper

Influence Of Interrupted Growth On The Luminescence Properties Of Quantum Wells
Author(s): D. Bimberg; J. Christen; T. Fukunaga; H. Nakashima; D. E. Mars; J. N. Miller
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Paper Abstract

The natural lineshape of luminescence from a quantum well shows Gaussian broadening if its interfaces are not ideally abrupt. The results of a comparative study of the model quantum well system AlGaAs/GaAs/AlGaAs grown by molecular beam epitaxy with and without interruption of the growth at the interfaces is presented. In addition a detailed lineshape theory is outlined, allowing for a quantitative determination of the interface roughness distribution function. We find this function to depend in a delicate way on growth rates temperature, interruption time and chemical compositon of the growth surface. Roughness reduction upon growth interruption is analyzed in detail. For specific growth conditions and interruptions of 2 min at both interfaces formation of up to 7 gm large interface islands differing by a one monolayer step (2.8 Å) are observed. Consequently such quantum wells have a columnar structure, which can be directly visualized using cathodoluminescence imaging. Strong reduction of island size indicating transition from planar growth to three-dimensional growth is observed by CLI upon an increase of growth temperature from Tg = 600°C to 660°C.

Paper Details

Date Published: 16 May 1988
PDF: 8 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943416
Show Author Affiliations
D. Bimberg, Institut fur Festkorperphysik der Technischen Universitat (Germany)
J. Christen, Institut fur FestkOrperphysik der Technischen Universitat (Germany)
T. Fukunaga, Oki Electric Industry Co (Japan)
H. Nakashima, Osaka University (Japan)
D. E. Mars, Hewlett-Packard Laboratories (United States)
J. N. Miller, Hewlett-Packard Laboratories (United States)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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