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Proceedings Paper

The Engineering Of Optical Absorption Coefficients In Strained Multiquantum Well Systems
Author(s): G. P. Kothiyal; S-C. Hong; W-P. Hong; Jasprit Singh; P. Bhattacharya
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Paper Abstract

A detailed experimental and theoretical study of the optical transitions in strained quantum wells has been carred out. The quantum wells are grown so that the well region is under biaxial compressive (InvGai As/A1 Gai As system) or under biaxial tensile (GaAs/ InGaAlAs or GaAsP/A1GaAs systems)ltrainY. lfiYs allows the possibility of reversing the light hole-heavy hole ordering. Theoretical studies are based on solving the Kohn-Luttinger Hamiltonian for the hole state after taking account of the strain via a deformation potential formalism. Experimental data were obtained from low-temperature absorption measurements. Emphasis has been given, in particular, to quantum well structures with biaxial tensile strain in the well region. In this structure, by a careful selection of strain, coincidence of light hole (LH) and heavy hole (HH) states has been achieved and this has consequently enhanced absorption coefficient by a factor of about 2. Theoretical studies on the GaAs (well)/InGaAlAs (barrier) and GaAsP/AlGaAs structures confirm this enhancement is due to increase in the oscillator strength due to the merger of the HH and LH excitons and an increase in joint density of states as a result of large in-plane hole masses. This behavior opens up the possibility of artificially enhancing the quantum efficiency of high frequency photodiodes or of fabricating modulator with high on/ off ratio.

Paper Details

Date Published: 16 May 1988
PDF: 8 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943415
Show Author Affiliations
G. P. Kothiyal, The University of Michigan (United States)
S-C. Hong, The University of Michigan (United States)
W-P. Hong, The University of Michigan (United States)
Jasprit Singh, The University of Michigan (United States)
P. Bhattacharya, The University of Michigan (United States)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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