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Proceedings Paper

Heterostructures Of Lattice Mismatched Semiconductors: Fundamental Aspects And Device Perspectives
Author(s): Paul Voisin
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Paper Abstract

We examine the structural and electronic properties of heterostructures grown out of lattice mismatched III-V compound semiconductors, with emphasis on their ability to serve as reliable materials for device applications. We also give a brief review of the most striking experimental results reported in the literature, in order to illustrate the diversity of interesting and specific features displayed by thin biaxially strained layers.

Paper Details

Date Published: 16 May 1988
PDF: 8 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943413
Show Author Affiliations
Paul Voisin, Groupe de Physique des Solides de L'Ecole Normale Superieure (France)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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