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Proceedings Paper

Note On The Optical Oscillator Strength Of Microscopic Superlattices As Optically Active Parts Of Devices
Author(s): Shigetoshi Nara
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Paper Abstract

The optical oscillator strengths between valence bands and conduction band minmum in (GaAs)(AlAs)n, (GaAs)n/(AlAs)i and (GaAs)i/(AlAs)n (n =1≈10) superlattices are estimated by means of an improved tight binding method in which the overlap integrals up to the second nearest neighbor atoms, including new parameters, are explicitly taken into account. Kroemer's rule of band offset values is employed in order to investigate the influence of tetragonality of [001] superlattice structure on the optical polarizations of oscillator strength with and without the existence of spin-orbit interactions. It is indicated that the superlattices allow us to tailor band structure. The examples studied here show that this tailoring can result in a considerable sacrifice of optical oscillator strength. However the possibility remains of designing another superlattice structures without sacrifice of oscillator strength.

Paper Details

Date Published: 16 May 1988
PDF: 8 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943411
Show Author Affiliations
Shigetoshi Nara, ATR (Japan)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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