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Proceedings Paper

Electroluminescence From A Short Asymmetric GaAs/AlAs Superlattice
Author(s): R. T. Phillips; N. R. Couch
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Paper Abstract

The electronic states of a short asymmetric GaAs/AlAs superlattice have been studied by monitoring the optical transitions involving the superlattice resonances of such a structure embedded in a GaAs p-n junction. Three electroluminescence features arise which involve the superlattice states, one very strongly dependent on the bias applied to the p-n junction. The intensity of the emission involving superlattice states increases relative to that from the bulk when a region of negative differential resistance in the I-V characteristic is crossed. Photoconductivity measurements show four main features, three of which can be associated with the emission. Field dependences of these transitions are presented, and some initial conclusions drawn concerning the nature of the electronic states involved.

Paper Details

Date Published: 16 May 1988
PDF: 7 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943410
Show Author Affiliations
R. T. Phillips, University of Exeter (UK)
N. R. Couch, GEC Research Ltd (UK)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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