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Proceedings Paper

Ultrawide Band Light Emitters By Means Of Quantum Confined Field Effects
Author(s): Ichiro Ogura; Masamichi Yamanishi; Yasuo Kan; Ikuo Suemune
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Paper Abstract

High speed photoluminescence (PL) switching by electric field-induced carrier separation inside the Quantum Well (QW) at room temperature, combined with carrier escaping out from the well to the barrier layers is demonstrated to be free from carrier life time limitation. A new technique for evaluating radiative lifetime separated from over-all life time is also shown. Based on the experimental data, possible device structures with functions of carrier-injection and of field control for practical application will be discussed.

Paper Details

Date Published: 16 May 1988
PDF: 6 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943408
Show Author Affiliations
Ichiro Ogura, Hiroshima University (Japan)
Masamichi Yamanishi, Hiroshima University (Japan)
Yasuo Kan, Hiroshima University (Japan)
Ikuo Suemune, Hiroshima University (Japan)

Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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