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Proceedings Paper

Temperature Dependence Of Threshold Current Of Double Quantum Well, Separately Confined Heterostructure (AlGa)As/GaAs Lasers Grown By MOCVD
Author(s): B Garrett; R W Glew; E J Thrush
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Paper Abstract

The temperature sensitivity of threshold current of double quantum well lasers is studied both theoretically and experimentally over the temperature range 77 K to 300 K. It is found that these devices behave predictably up to 160 K but that the model used fails to describe the temperature sensitivity beyond 160 K. Lasers with reduced threshold gain have a lower temperature sensitivity around room temperature at the expense of an increased threshold current density.

Paper Details

Date Published: 16 May 1988
PDF: 5 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943407
Show Author Affiliations
B Garrett, STC Technology Ltd. (UK)
R W Glew, STC Technology Ltd. (UK)
E J Thrush, STC Technology Ltd. (UK)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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