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Proceedings Paper

Gaalas MBE Quantum Well Laser With Low Threshold Current Modelling And Experiment
Author(s): B Saint-Cricq; F Chatenoud; N Fabre; F Lozes-Dupuy; G Vassilieff
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Paper Abstract

A model for the determination of the threshold current of quantum well laser is presented, using a no-k-selection rule for the gain calculation and taking into consideration propaga-tion and confinement properties of the waveguide. A graded refractive index separate confinement heterostructure (GRIN-SCH) was fabricated by molecular beam epitaxy. Threshold currents of 11 mA are obtained on ridg (3 x 200 4m) devices from a wafer for which the broad area threshold density is 380 A/cm2. Gain measurements performed on these lasers show the good fit between experimental spectra and theoretical spectra obtained with the model.

Paper Details

Date Published: 16 May 1988
PDF: 8 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943406
Show Author Affiliations
B Saint-Cricq, CNRS (France)
F Chatenoud, CNRS (France)
N Fabre, CNRS (France)
F Lozes-Dupuy, CNRS (France)
G Vassilieff, CNRS (France)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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