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Proceedings Paper

Optoelectronic Device Applications Of Doping Superlattices
Author(s): Gottfried H Dohler
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Paper Abstract

Doping superlattices, composed of alternating n- and p-doped semiconductor layers, possibly with intrinsic regions in between ("n-i-p-i structures") exhibit novel electrical and optical properties. Their potential for a wide variety of new electro-optical and opto-optical devices is discussed and recent results are reported.

Paper Details

Date Published: 16 May 1988
PDF: 6 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943403
Show Author Affiliations
Gottfried H Dohler, Universitat Erlangen-Nurnberg (Germany)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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