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Proceedings Paper

Electric-Field-Induced Refractive Index Change In Gainasp/Inp Mqw Structures
Author(s): Kazuhiko Shimomura; K. G. Ravikumar; Tomoyuki Kikugawa; Shigehisa Arai; Yasuharu Suematsu
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Paper Abstract

Large change in the field induced refractive index is achievable by the use of the MQW structures. The property of which can be advantageously utilized to realize high speed external modulators and switches. The GalnAsP/InP MQW structures was prepared by LPE method and the electric field induced absorption was measured. Reflection of light due to refractive index change as well as absorption coefficient change was observed for the first time. Intersectional optical switch based on this change was also fabricated.

Paper Details

Date Published: 16 May 1988
PDF: 7 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943402
Show Author Affiliations
Kazuhiko Shimomura, Tokyo Institute of Technology (Japan)
K. G. Ravikumar, Tokyo Institute of Technology (Japan)
Tomoyuki Kikugawa, Tokyo Institute of Technology (Japan)
Shigehisa Arai, Tokyo Institute of Technology (Japan)
Yasuharu Suematsu, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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