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Proceedings Paper

Modulation Of Absorption By An Electric Field In Type II GaAs/AlAs Superlattices
Author(s): G Danan; F R Ladan; F Mollot; R Planel
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Paper Abstract

In certain cases. GaAs/AlAs superlattices may be type II, electrons being spatially separated from holes. Thus. fundamental optical transitions are weak. Under longitudinal electric field. this separation may be reduced and optical transition probability increased. We report preliminary photoluminescence experiments which evidence this effect. A theoretical description using the envelope function approximation is given.

Paper Details

Date Published: 16 May 1988
PDF: 4 pages
Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943401
Show Author Affiliations
G Danan, Centre National de la Recherche Scientifique (France)
F R Ladan, Centre National de la Recherche Scientifique (France)
F Mollot, Centre National de la Recherche Scientifique (France)
R Planel, Centre National de la Recherche Scientifique (France)


Published in SPIE Proceedings Vol. 0861:
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
Alfred R. Adams, Editor(s)

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