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Proceedings Paper

Theory Of Non-Linear Index Of Refraction Of Compound Semiconductors
Author(s): B. Jensen; A. Torabi
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Paper Abstract

The non-linear index of refraction of a compound semiconductor is calculated below the fundamental absorption edge as a function of incident laser field intensity, frequency and basic material parameters such as band gap energy, effective electron mass, heavy hole mass, spin orbit splitting energy and lattice constant. No adjustable parameters are involved. Theoretical results are obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. Comparison of theory with experimental results for the ternary compound Hgl-xCdxTe and binary compound InSb is discussed.

Paper Details

Date Published: 16 October 1984
PDF: 7 pages
Proc. SPIE 0484, Infrared Optical Materials and Fibers III, (16 October 1984); doi: 10.1117/12.943158
Show Author Affiliations
B. Jensen, Boston University (United States)
A. Torabi, Boston University (United States)


Published in SPIE Proceedings Vol. 0484:
Infrared Optical Materials and Fibers III
Paul Klocek, Editor(s)

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