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Proceedings Paper

Direct-Write Electron Beam Patterning Reregistration And Metrology
Author(s): William B. Glendinning; Wayne M. Goodreau
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Paper Abstract

To pattern high resolution integrated circuit substrates for multilevel fabrication processes demands exacting alignment and reregistration procedures of a direct-write electron beam exposure system. A laboratory spot-electron-beam direct-write exposure system (LEBES-D, Perkin-Elmer/ETEC) using a laser interferometer controlled stage with a stage error loop to the beam deflection subsystem has been adopted for fine line patterning applications. Single and multiple subfield overlay writing are performed with undesirable errors stemming from both operator and equipment subsystem factors. An optically read vernier metrology method is used to measure overlay errors to below 0.1 microns.

Paper Details

Date Published: 15 October 1984
PDF: 4 pages
Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); doi: 10.1117/12.943059
Show Author Affiliations
William B. Glendinning, Electronics Technology and Devices Laboratory (United States)
Wayne M. Goodreau, Electronics Technology and Devices Laboratory (United States)


Published in SPIE Proceedings Vol. 0480:
Integrated Circuit Metrology II
Diana Nyyssonen, Editor(s)

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