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Proceedings Paper

Overlay Analysis Of Step-And-Repeat Lithographic Systems For Mask Making
Author(s): L. C. Hsia; L. S. Su; R. L. West
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Paper Abstract

The demand for smaller device geometrics and larger wafer size has drastically increased the need for more accurate level-to-level registration. It is more important than ever before to understand and control the overlay parameter of a step-and-repeat mask-making system. Furthermore, such an understanding is necessary for evaluation of mask quality. This paper discusses some important aspects of mask-making systems and gives a mathematical description of the first order and higher-order parameters. Some measurement techniques for obtaining those parameters are presented. Data are presented for special test patterns and for product masks fabricated on both optical and e-beam systems. This paper also includes a discussion of measurement strategy and a scheme for data reduction which minimizes estimating errors.

Paper Details

Date Published: 15 October 1984
PDF: 7 pages
Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); doi: 10.1117/12.943057
Show Author Affiliations
L. C. Hsia, IBM Corporation (United States)
L. S. Su, IBM Corporation (United States)
R. L. West, IBM Corporation (United States)


Published in SPIE Proceedings Vol. 0480:
Integrated Circuit Metrology II
Diana Nyyssonen, Editor(s)

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