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Proceedings Paper

Sem Metrology: Effects Due To Topography And Composition
Author(s): K. Monahan; D. Gates; W. Mah; B. Richardson; J. Wilcox
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Paper Abstract

SEM metrology is shown to be the technique of choice for linewidth measurements in cases where high-resolution (0.01 μm, 3-sigma), small sample height (0.005 μm), and large depth-of-focus (DOF>1 μm) are appropriate. Examples are submicron structures, materials with varying surface roughness, and patterned materials with high aspect ratios, respectively. The most consistent measurements are made when compositional contrast is suppressed by gold coating so that the structure in the secondary electron profiles is dominated by topography. Topographic effects due to grain size in aluminum and standing wave structure in photoresist are readily observed.

Paper Details

Date Published: 15 October 1984
PDF: 7 pages
Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); doi: 10.1117/12.943053
Show Author Affiliations
K. Monahan, GCA Corporation (United States)
D. Gates, GCA Corporation (United States)
W. Mah, GCA Corporation (United States)
B. Richardson, GCA Corporation (United States)
J. Wilcox, GCA Corporation (United States)

Published in SPIE Proceedings Vol. 0480:
Integrated Circuit Metrology II
Diana Nyyssonen, Editor(s)

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