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Proceedings Paper

Precision Linewidth Measurement Using A Scanning Electron Microscope
Author(s): Dieter G. Seiler; D. Vernon Sulway
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Paper Abstract

The trend to smaller feature sizes in the integrated circuit industry has resulted in the need to measure linewidths, periodicities, and registration and overlay errors with greater accuracy and precision. The scanning electron microscope (SEM) has potential as a measurement tool for fine line geometries due to its increased resolution and depth of field compared to optical systems. However, the unique and precise determination of magnification in the SEM is a difficult task without the use of tedious calibration procedures which typically must be performed each time a magnification-determining instrument parameter is altered. A new measurement technique is described which effectively eliminates the need for SEM magnification calibration when performing measurements over a broad range of operating conditions. Examples of measurements made on resist-coated silicon, chrome-on-glass masks, and the NBS 484 standard reference material are presented to illustrate the effectiveness of the new differential measurement technique.

Paper Details

Date Published: 15 October 1984
PDF: 8 pages
Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); doi: 10.1117/12.943052
Show Author Affiliations
Dieter G. Seiler, Bausch and Lomb (Canada)
D. Vernon Sulway, Bausch and Lomb (Canada)


Published in SPIE Proceedings Vol. 0480:
Integrated Circuit Metrology II
Diana Nyyssonen, Editor(s)

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