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Proceedings Paper

Optical Linewidth Measurement On Patterned Metal Layers
Author(s): D. Nyyssonen
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Paper Abstract

In a previous paper, 1 a waveguide model was developed for the imaging of micrometer-sized lines patterneu in thick layers of dielectric materials (silicon dioxide) with application to linewidth measurement on integrated-circuit wafers. This paper describes the extension of this work to metals characterized by their complex index of refraction, n + iK, as well as the inclusion of a sublayer such as a silicon dioxide insulating layer. This extension allows the modeling of optical imaging and linewidth measurement on metal-on-silicon (MOS) structures. It is shown that the image structure for metals at and near focus is different from that for dielectrics. Thick and thin layer (less than 200 nm) imaging is compared. Experimental image profiles of metal lines at and near focus are also shown. The experimental data were obtained from a bright-field microscope using a laser source (530 nm) and controlled spatial coherence.

Paper Details

Date Published: 15 October 1984
PDF: 6 pages
Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); doi: 10.1117/12.943049
Show Author Affiliations
D. Nyyssonen, National Bureau of Standards (United States)


Published in SPIE Proceedings Vol. 0480:
Integrated Circuit Metrology II
Diana Nyyssonen, Editor(s)

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