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Proceedings Paper

Photo-Induced Complex Permittivity Measurements Of Semiconductors At 9 Ghz
Author(s): I. Shih; L. Ding; T. J.F. Pavlasek; C. H. Champness
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Paper Abstract

This paper describes a microwave method for determining the photo-induced incremental complex permittivity of semiconductor materials such as Si, Ge, Te, and-- also for the determination of the average collision time. An unbalanced bridge technique is used which allows sensitive measurements even at low optical illumination levels, with relatively simple computational procedures. This method is thus useful for evaluating the potential usefulness of semiconductors for optically controlled microwave devices.

Paper Details

Date Published: 1 November 1987
PDF: 7 pages
Proc. SPIE 0477, Optical Technology for Microwave Applications I, (1 November 1987); doi: 10.1117/12.942619
Show Author Affiliations
I. Shih, McGill Univ. (Canada)
L. Ding, Chongqing Univ. (China)
T. J.F. Pavlasek, McGill Univ. (Canada)
C. H. Champness, McGill Univ. (Canada)

Published in SPIE Proceedings Vol. 0477:
Optical Technology for Microwave Applications I
Shi-Kay Yao, Editor(s)

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