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Proceedings Paper

Excimer Laser Enhancement And Probing Of 111-V Compound Semiconductor Chemical Vapor Deposition
Author(s): V. M. Donnelly; R. F. Karlicek
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Paper Abstract

InP and In203 have been deposited on GaAs, and InP ,ubstrates by excimer laser induced photodecomposition of (CH3)3InP(CH3)3 and P (CH3) 3 vapors at 193 nm. Phosphorus incorporation in the films was greatly enhanced by focusing the laser beam to promote multiple-photon dissociation processes. These conditions also lead to enhanced carbon inclusion in the films, due to formation of species such as CH and CH2 in the gas-phase. However, this carbon inclusion could be suppressed by focusing the beam onto the surface at normal incidence. The technique offers several potential advantages over conventional metal-organic chemical vapor deposition (MOCVD), including lower temperature, enhanced rates, safer gases, and three-dimensional film composition control. Strong atomic In emission is observed in the gas-phase above the depositing film, due to a multiple photon dissociation process. Gas-phase fluorescence from P, CH, and C was also observed. These emissions give insight into the photodecomposition mechanism and also serve as a monitor of metal organic precursor concentrations. In addition, excimer laser excitation has been used to detect PH3, P2, AsH3, As2, InCI, and GaC1 in a reaction tube designed to simulate a conventional CVD growth reactor. These are the primary reactants participating in the chemical vapor deposition (CVD) of InP/InGaAsP epitaxial layers. Detection limits for all these species are well below those levels typically employed during layer growth.

Paper Details

Date Published: 15 August 1984
PDF: 10 pages
Proc. SPIE 0476, Excimer Lasers: Their Applications & New Frontiers in Lasers, (15 August 1984); doi: 10.1117/12.942579
Show Author Affiliations
V. M. Donnelly, AT&T Bell Laboratories (United States)
R. F. Karlicek, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0476:
Excimer Lasers: Their Applications & New Frontiers in Lasers
Ronald W. Waynant, Editor(s)

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