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Proceedings Paper

Gas Immersion Laser Doping
Author(s): R. J. Pressley; T. W. Sigmon; T. S. Fahlen
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Paper Abstract

The use of short pulse lasers to dope silicon is discussed. Results of the process when used to fabricate silicon solar cells and p+-n- diode structures are reviewed. The mechanism of doping is discussed and electrical and structural data presented. Successful fabrication of very shallow, high concentration junctions by this technique makes it a viable process for silicon VLSI processing.

Paper Details

Date Published: 15 August 1984
PDF: 10 pages
Proc. SPIE 0476, Excimer Lasers: Their Applications & New Frontiers in Lasers, (15 August 1984); doi: 10.1117/12.942578
Show Author Affiliations
R. J. Pressley, XMR Inc. (United States)
T. W. Sigmon, Stanford Electronics Laboratories (United States)
T. S. Fahlen, XMR Inc. (United States)

Published in SPIE Proceedings Vol. 0476:
Excimer Lasers: Their Applications & New Frontiers in Lasers
Ronald W. Waynant, Editor(s)

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