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Proceedings Paper

Planar InGaAs/InP APD Fabrication Using Silicon Implantation And Regrowth Techniques
Author(s): P. P. Webb; R. J. McIntyre; M. Holunga; T. Vanderwel
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Paper Abstract

Planar InGaAs/InP APD's having a SAM structure have been fabricated making use of ion implantation of silicon as the n-type source for achieving multiplication in the InP region. Quantum efficiencies greater than 80% and gains greater than 50 have been achieved. Noise measurements indicate multiplied bulk dark currents less than 1 nA for a device of diameter 50 micrometers. For certain conditions of the fabrication parameters, response times less than 1 ns are achieved without the use of an intermediate quaternary layer between the InGaAs and InP regions.

Paper Details

Date Published: 4 February 1988
PDF: 7 pages
Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); doi: 10.1117/12.942559
Show Author Affiliations
P. P. Webb, RCA Inc. (Canada)
R. J. McIntyre, RCA Inc. (Canada)
M. Holunga, RCA Inc. (Canada)
T. Vanderwel, RCA Inc. (Canada)

Published in SPIE Proceedings Vol. 0839:
Components for Fiber Optic Applications II
Vincent J. Tekippe, Editor(s)

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