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Proceedings Paper

Avalanche Photodiodes For High-Bit-Rate Lightwave Systems
Author(s): J. C. Campbell
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Paper Abstract

Avalanche photodiodes (APDs) capable of providing useful gain at microwave frequencies are vital components for future multi-gigabit/s lightwave transmission systems. To date, the APD structure that has shown the most promise for high frequency operation consists of a wide-bandgap multiplication region and a narrow-bandgap absorbing layer separated by a transition region to reduce charge accumulation at the heterojunction interfaces (SAGM-APD). InP/InGaAsP/InGaAs APDs of this type have exhibited bandwidths as high as 8 GHz and gain-bandwidth products of 70 GHz. In this paper we discus the physical effects that determine their speed and project performance limits.

Paper Details

Date Published: 4 February 1988
PDF: 7 pages
Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); doi: 10.1117/12.942557
Show Author Affiliations
J. C. Campbell, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0839:
Components for Fiber Optic Applications II
Vincent J. Tekippe, Editor(s)

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