Share Email Print

Proceedings Paper

Investigation Of Spontaneous Lines From Upper And Lower Levels Of He-Ne Laser Line 632.8 nm Excited In Hollow Cathode
Author(s): S. S. Cartaleva; S. V. Gateva; V. J. Stefanov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

It has been found that the 632.8 nm and 1.15 - 1.20 μm He-Ne laser generations are more effective in Cu hollow cathode than in Al one.The purpose of this research was to find whether the higher efficiency of the copper hollow cathode He-Ne laser at 632.8 nm (3S2- 2P4) transition is due to higher upper laser level population or depopulation of the lower laser level. To compare the population of the laser levels in Cu and Al cathodes the intensities of some Ne spontaneous lines and reabsorbtion of Ne and He lines finishing on metastable levels have been investigated.The main results are that the upper laser and 4S0 He metastable levels are more populated in hollow Cu cathode than in Al one and there is no significant difference between the low laser neither between the 1s Ne metastable level populations in Cu and Al hollow cathodes.

Paper Details

Date Published: 18 January 1985
PDF: 2 pages
Proc. SPIE 0473, Symposium Optika '84, (18 January 1985); doi: 10.1117/12.942421
Show Author Affiliations
S. S. Cartaleva, Bulg. Ac. Sc., Institute of Electronics (Bulgaria)
S. V. Gateva, Bulg. Ac. Sc., Institute of Electronics (Bulgaria)
V. J. Stefanov, Bulg. Ac. Sc., Institute of Electronics (Bulgaria)

Published in SPIE Proceedings Vol. 0473:
Symposium Optika '84
Gabor Lupkovics; Andras Podmaniczky, Editor(s)

© SPIE. Terms of Use
Back to Top