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Proceedings Paper

Monolithically Integrated Photodiode And Preamplifier For Wide-Band Fiber Optic Links
Author(s): C. Fan; P. K.L. Yu
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Paper Abstract

A monolithic integration of InGaAs PIN photodiodes and InP junction field-effect transistors has been demonstrated. The photodiodes show a frequency response beyond 22GHz with a quiantum efficiency of 65%. The FETs have a transconductance of 35mS/mm, a leakage current of less than lOnA/mm and a gate capacitance of less than 0.7pF/mm. The cut-off frequency of the FETs is estimated to be 7GHz. The receiver sensitivity is calculated to be -33dBm at 2 GHz.

Paper Details

Date Published: 10 March 1988
PDF: 5 pages
Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942366
Show Author Affiliations
C. Fan, University of California (United States)
P. K.L. Yu, University of California (United States)

Published in SPIE Proceedings Vol. 0835:
Integrated Optical Circuit Engineering V
Mark A. Mentzer, Editor(s)

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