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Proceedings Paper

Defect Repair Techniques For X-Ray Masks
Author(s): D K Atwood; G J Fisanick; W A Johnson; A Wagner
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Paper Abstract

Low defect density masks are necessary to obtain the high chip yields required in VLSI technology. This paper will outline the boron nitride mask fabrication process that has been developed at AT&T Bell Laboratories, and discuss the nature and distribution of normally encountered defects. The advantages and disadvantages of various repair techniques will be addressed and specific examples of repairs made on silicon integrated circuit X-ray masks will be shown.

Paper Details

Date Published: 18 June 1984
PDF: 8 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942340
Show Author Affiliations
D K Atwood, AT&T Bell Laboratories (United States)
G J Fisanick, AT&T Bell Laboratories (United States)
W A Johnson, AT&T Bell Laboratories (United States)
A Wagner, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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