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Proceedings Paper

Characterization Techniques For X-Ray Lithography Submicron Metrology
Author(s): S. A Harrell; D. Alexander
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Paper Abstract

An electrical test structure and a methodology are proposed for equipment, process, and method characterization for submicron lithographic VLSI applications. An integrated approach of electrical test structures, optical test structures with manual or automatic optical inspection methods is described.

Paper Details

Date Published: 18 June 1984
PDF: 7 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942335
Show Author Affiliations
S. A Harrell, Micronix Corporation (United States)
D. Alexander, Micronix Corporation (United States)


Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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