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Proceedings Paper

Proton Implanted Gallium Arsenide Optical Waveguides
Author(s): Keith A. Ramsey; James R. Busch; Steven Bibyk; George Valco; Mark Mentzer
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Paper Abstract

Results of a study of proton implanted gallium arsenide (GaAs) waveguides are presented. The waveguides were made using standard implant equipment available to the microelectronics industry. Protons at energies of 190 Kev were implanted into heavily doped, n-type gallium arsenide. Implant doses were usually at 5E15 per cm2., with water used as the ion source. The implants were performed at room temperature, although some heating of the samples occurred. The main anneals were done at 350°C for 30 minutes. The waveguides were tested at 1.06μm using a YAG II laser. Loss measurements were done as a function of the substrate doping and etch pit density of the samples. Good guides were made using a doping of 3.5E18 cm-3 and etch pit density of 35000 cm-2. Low etch pit densities did not yield acceptable guides using the above fabrication procedures.

Paper Details

Date Published: 10 March 1988
PDF: 7 pages
Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942330
Show Author Affiliations
Keith A. Ramsey, Ohio State University (United States)
James R. Busch, Battelle Memorial Institute (United States)
Steven Bibyk, Ohio State University (United States)
George Valco, Ohio State University (United States)
Mark Mentzer, ISC Defense Systems (United States)


Published in SPIE Proceedings Vol. 0835:
Integrated Optical Circuit Engineering V
Mark A. Mentzer, Editor(s)

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