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Proceedings Paper

Precision Alignment For X-Ray Lithography
Author(s): J L Kreuzer; G P Hughes; C LaFiandra
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Paper Abstract

X-ray lithography promises cost-effective integrated circuit production with submicron resolution. Achievement of this promise requires precision mask-to-wafer alignment over the whole wafer. This paper describes Perkin-Elmer's X-100 full-field X-ray lithography system with emphasis on the alignment subsystem. The alignment subsystem provides six degrees of freedom alignment between wafer and mask with an air gauge gap setting technique and a laser based physical optics lateral alignment system. These techniques were selected to be compatible with the subfield-stepper systems needed to pattern wafers over 100 mm in diameter. The physical optics technique has demonstrated alignment stability with signal-to-noise ratios representing less than 0.01 micron rms error for a 30 Hz bandwidth. The alignment system and its relation to the entire lithographic system is described in detail. X-ray exposed alignment overlays are shown.

Paper Details

Date Published: 18 June 1984
PDF: 6 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942329
Show Author Affiliations
J L Kreuzer, Perkin-Elmer Corporation (United States)
G P Hughes, Perkin-Elmer Corporation (United States)
C LaFiandra, Perkin-Elmer Corporation (United States)


Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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