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Proceedings Paper

New 8Cm Diameter Ion Source For Ion-Assisted Deposition And Snutterina Annlications
Author(s): Ling Shi De; Liang Xiao; Zhou Peng Fei
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Paper Abstract

A new 8cm-diam ion source has been fabricated for ion-assisted deposition and sputtering. This source empolies a divergent magnetic field discharge chamber, and the field is gene-rated by a permanent magnet located at the upstream end of chamber. This design permits the source being compactly fabricated and conveniently maintained. Also this source emploies a one-grid ion optics to extract low energy ion beam besides a two-grid ion optics, and the ion optics is easy to be replaced. For the two-grid ion optics, current densities of 500eV Ar+ up to 1.0mA/cm2 were acheived with a uniformity of +5* over the center 7cm-diam of the beam at a distance 15cm from the source and a pressure of 1.5X10-4Torr. At the same conditions, an average current density up to 0.6mA/cm2 for 100eV Ar+ was obtained with an 80mesh-/inch one-grid ion optics. This source has been applied to the IAD, and improvements of the firmness and stability of ZnS/MgF2 and TiO2/SiO2 multilayer filters deposited by the IAD's technique has been studied.

Paper Details

Date Published: 10 March 1988
PDF: 6 pages
Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942326
Show Author Affiliations
Ling Shi De, Shanghai Insistute of Mechnacial Engineering (China)
Liang Xiao, Shanghai Insistute of Mechnacial Engineering (China)
Zhou Peng Fei, Shanghai Insistute of Mechnacial Engineering (China)


Published in SPIE Proceedings Vol. 0835:
Integrated Optical Circuit Engineering V
Mark A. Mentzer, Editor(s)

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