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Proceedings Paper

Amorphous Silicon As An Inorganic Resist
Author(s): P H La Marche; R. Levi-Setti
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Paper Abstract

Negative tone images have been produced directly in glow discharge deposited amorphous silicon hydride by selective gallium-ion implantation. Like crystalline silicon, amorphous silicon exhibits a greatly reduced etch rate in aqueous caustic solutions when implanted with doses in excess of about 1013 Ga ions/cm2. The amorphous silicon behaves as a negative resist with a threshold sensitivity of about 1 pC/cm2. This material is particularly attractive as a possible masking material for ultra-violet light due to its high absorption properties in this wavelength region, low relative cost and the ease by which it can be deposited on a wide range of materials.

Paper Details

Date Published: 18 June 1984
PDF: 6 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942323
Show Author Affiliations
P H La Marche, The University of Chicago (United States)
R. Levi-Setti, The University of Chicago (United States)


Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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