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Proceedings Paper

POLY(2,2,2-Trifluoroethyl A-Chloroacrylate) PTFECA, A High Sensitivity Ion Resist
Author(s): John E. Jensen; Charles W. Slayman
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Paper Abstract

For masked ion beam lithography (MIBL) beam-induced mask heating can cause deformations and image distortion. This can be avoided by the use of a resist ten times more sensitive than PMMA. Poly(2,2,2-trifluoroethyl -chloroacrylate), PTFECA, has been shown to be about ten times more sensitive than PMMA for proton beam exposures at 100 keV, and has demonstrated sub-half-micron resolution. The etch characteristics of PTFECA, however, are not as good as PMMA.

Paper Details

Date Published: 18 June 1984
PDF: 7 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942321
Show Author Affiliations
John E. Jensen, Hughes Research Laboratories (United States)
Charles W. Slayman, Hughes Research Laboratories (United States)


Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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