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Proceedings Paper

Masked Ion Beam Lithography Using Stencil Masks
Author(s): J. N Randall; D C Flanders; N P Economou
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Paper Abstract

Masked ion beam lithography has the potential to become a high resolution proximity printing technique which is capable of short exposure times. When used for proximity printing, the resolution of masked ion beam lithography is limited by the interaction of the transmitted ions with the ion beam mask. A straightforward approach to eliminating the mask induced scattering is to use a stencil mask where the transmission areas are simply holes in the mask. We have been developing an exposure process that uses a grid support mask which replaces completely open areas with a fine grid. The image of the grid can be eliminated by rocking the incident angle of the beam. We will discuss a fabrication procedure for such a mask as well as investigations into its uses and limitations.

Paper Details

Date Published: 18 June 1984
PDF: 6 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942319
Show Author Affiliations
J. N Randall, Massachusetts Institute of Technology (United States)
D C Flanders, Massachusetts Institute of Technology (United States)
N P Economou, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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