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Proceedings Paper

Retarding Field Optics For Practical Electron Beam Lithography
Author(s): T. H Newman; RF. W Pease
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Paper Abstract

Recent work in retarding field optics for electron beam lithography has concentrated on the advantages to be gained for low electron landing energies (< 4 keV). We have examined the benefits obtained from the use of a retarding field when the electron landing energy is conventional (10-20 keV), eliminating the necessity for novel resist systems. The improved aberrations resulting from the use of a retarding field are discussed, and the reduction of space charge effects is simulated using a Monte Carlo calculation. Preliminary results indicate that a four-fold increase in current can be realized for a beam of given sharpness by using the retarding field. Practical considerations for implementing retarding field optics are examined.

Paper Details

Date Published: 18 June 1984
PDF: 7 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942313
Show Author Affiliations
T. H Newman, Stanford University (United States)
RF. W Pease, Stanford University (United States)


Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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