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Proceedings Paper

Enhanced Pattern Accuracy With Mebes III
Author(s): J. Freyer; K. Standiford; R Sills
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Paper Abstract

Optical lithography continues to improve resolution, further reducing minimum feature sizes in semiconductor device production. A critical step in this process is generation of masks with exceptional accuracy. The MEBES III electron beam lithography system was designed and built to fulfill the requirements of l to 2 micrometer technology and below. The results of overlay machine performance indicate that MEBES consistently meets and surpasses its overlay specifications. This paper discusses the philosophy behind the MEBES III design, the development of metrology methods to verify performance, and the measured accuracy of several machines in a production environment. Measurement tools internal to the MEBES system are compared to a Nikon model 21 X-Y measurement system to verify accuracy of the analysis.

Paper Details

Date Published: 18 June 1984
PDF: 10 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942308
Show Author Affiliations
J. Freyer, The Perkin-Elmer Corporation (United States)
K. Standiford, The Perkin-Elmer Corporation (United States)
R Sills, The Perkin-Elmer Corporation (United States)

Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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