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Proceedings Paper

Development Of Gallium Arsenide-Based Spatial Light Modulators
Author(s): Michael C. Hebbron; Surinder S. Makh
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Paper Abstract

A liquid crystal light valve (LCLV) incorporating a GaAs photoconductor has been developed. The device structure is based upon a microdiode array and hybrid field effect twisted nematic liquid crystal cell. The active area of 2.54 x 2.54 cm (1 in. x 1 in.) is defined by approximately 40 million, 2 μm square Schottky diodes at 4 μm pitch. Two device types are reported, both employing 2 in. GaAs wafers of semi-insulating LEC grown material. The first device has a photoconductor thinned to 70 μm. An ohmic back contact is established with Au/Ge Ni alloy. Results obtained from this device are presented. A second device is currently under investigation featuring a thinner photo-conductor <20 μm and a Se ion implanted heavily doped n+ back contact. Construction details are given for both LCLVs and reasons for initial design modifications are included. A brief overview of the present status of the second generation GaAs LCLV is presented and planned developments discussed.

Paper Details

Date Published: 19 February 1988
PDF: 5 pages
Proc. SPIE 0825, Spatial Light Modulators and Applications II, (19 February 1988); doi: 10.1117/12.941980
Show Author Affiliations
Michael C. Hebbron, Sowerby Research Centre (England)
Surinder S. Makh, Sowerby Research Centre (England)


Published in SPIE Proceedings Vol. 0825:
Spatial Light Modulators and Applications II
Uzi Efron, Editor(s)

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