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Proceedings Paper

Invited Paper GaAs High-Gain Photodetectors : Attractive Devices For Raman Spectroscopy
Author(s): Monique T. Constant; Didier J. Decoster
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Paper Abstract

The purpose of this paper is to present GaAs photodetectors which are suitable for Raman Spectroscopy. After a description of the devices and their technology, a complete analysis of their electrical and optical properties is presented. The results obtained are reviewed briefly in terms of static and dynamic responsivities or gains and noise figures. An example of the application of these devices in a conventionnal Raman detection system and the performances of the photodetector array in image detection are given. Furthermore, the use of the Schottky photodiode associated with an FET in Raman spectroscopic systems is discussed.

Paper Details

Date Published: 19 January 1988
PDF: 8 pages
Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); doi: 10.1117/12.941946
Show Author Affiliations
Monique T. Constant, Universite des Sciences et Techniques de Lille Flandres-Artois (France)
Didier J. Decoster, Universite des Sciences et Techniques de Lille Flandres-Artois (France)

Published in SPIE Proceedings Vol. 0822:
Raman and Luminescence Spectroscopy in Technology
Fran Adar; James E. Griffiths, Editor(s)

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